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Por favor, use este identificador para citar o enlazar este documento: https://ria.asturias.es/RIA/handle/123456789/6701
Título : Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC–DC power converters
Autor : Castro, Ignacio
Roig, Jaume
Vlachakis, Basil
Bauwens, Filip
Lamar, Diego G.
Gelagaev, Ratmir
Driesen, Johan
Fecha de publicación : 13-may-2015
Resumen : A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon superjunction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the parasitics obtained from the printed circuit board characterization. It is important to note that it also includes original features accounting for strong capacitive nonlinearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. A detailed analysis on how to obtain this electrical characteristic is included in this study. Finally, the high accuracy of the model is validated with experimental measurements in a double-pulse buck converter setup by using commercial SJ MOSFET, as well as advanced device prototypes under development.
URI : https://ria.asturias.es/RIA/handle/123456789/6701
ISBN : 10.1109/TPEL.2015.2433017
Aparece en las colecciones: Ingeniería
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