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Por favor, use este identificador para citar o enlazar este documento: https://ria.asturias.es/RIA/handle/123456789/8138
Título : SuperJunction Cascode, a Configuration to Break the Silicon Switching Frequency Limit
Autor : Rodriguez, Juan
Rodriguez, Alberto
Castro, Ignacio
Lamar, Diego G.
Roig, Jaume
Bauwens, Filip
Palabras clave : High-frequency, high-efficiency, cascode configuration, SuperJunction MOSFET, silicon.
Fecha de publicación : 18-sep-2016
Editorial : IEEE
Citación : J. Rodriguez, A. Rodriguez, I. Castro, D. G. Lamar, J. Roig and F. Bauwens, "SuperJunction cascode, a configuration to break the silicon switching frequency limit," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 2016, pp. 1-8.
Resumen : This paper evaluates the SuperJunction MOSFET in cascode configuration with a low-voltage silicon MOSFET. The structure combines the good switching performance provided by the cascode configuration with advantages of the silicon technology as the robustness, the maturity and the low-cost. The objective of this paper is to elucidate and to demonstrate the reduction of switching losses of SuperJunction MOSFETs in cascode configuration with respect to their standalone counterparts (directly driven). A detailed simulation analysis of power loss contributions is carried out under hard-switching operation. Eventually, experimental evidence is provided by using a boost converter (100 V-to-400 V) in continuous conduction mode for a wide range of switching frequency (100 kHz-to-400 kHz) and output power (180W-to-500W).
URI : https://ria.asturias.es/RIA/handle/123456789/8138
ISBN : 978-1-5090-0737-0
Aparece en las colecciones: Ingeniería
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